Principal SiC Device Technologist

Job Purpose:

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. 

We are seeking a Principal SiC Device Technologist to join our fast-growing, collaborative team. The ideal candidate is self-motivated, energetic, and able to thrive in a high-growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics. 

The Principal SiC Device Technologist drives the development and optimization of Navitas next-generation SiC power devices, such as MOSFETs, IGBTs and Schottky Barrier Diodes (SBDs) ranging from 1200 V to 10 kV and beyond. This role involves leading R&D efforts from concept to volume manufacturing, specializing in device physics, process integration, and reliability

Key Responsibilities and Duties:

• Device Design and Optimization: Lead the simulation, design, and performance optimization of next-generation SiC power devices to improve efficiency, power density, and reliability.
• Process Integration & Development: Define and optimize SiC epitaxy, fabrication, and process integration to enhance yield.
• Technical Leadership: Drive the device technology roadmap, acting as a key technical liaison between design, fabrication, foundry, and packaging teams.
• Characterization and Testing: Co-ordinate detailed electrical characterization, parameter extraction, and failure analysis of SiC devices.
• Reliability & Qualification: Work with internal and external teams to define the strategy for technology qualification and ensure that new SiC technology platforms meet reliability standards.
• TCAD Modeling: Improve predictive modeling by providing data for TCAD and SPICE model calibration.
• Knowledge, Skills, Abilities, and Other Characteristics (KSAO’s)
• Strong analytical and problem-solving skills
• Excellent technical communication and negotiation abilities
• Comfortable working across cultures and global time zones
• Strong knowledge of SiC design and fabrication methodologies
• Familiarity with power manufacturing eco-system including vendors and OSATs
• Experience with high-voltage and high-reliability applications
• Leading by example
• Ability to travel up to 25%

Required Qualifications

• Degree in Electrical Engineering, Physics, or equivalent
• Minimum 5 years of industrial experience in SiC power device development, characterization, and/or process integration.
• Deep understanding of power semiconductor physics, particularly wide-bandgap devices (SiC, GaN).
• Strong understanding of wide-bandgap (WBG) semiconductor material properties, device physics (especially SiC MOSFETs), and MOS interface traps.
• Experience with scaling 150 mm to 200 mm power SiC technology

Preferred Qualifications

• PhD or Masters in  Electrical Engineering, Physics, or equivalent
• 10 years of industrial experience in SiC power device development, characterization, and/or process integration
• Demonstrated experience working with external foundries is preferred

• Strong data analytics skills and exposure to machine learning for test optimization.
• Strong understanding of wide-bandgap (WBG) semiconductor material properties, device physics (especially SiC MOSFETs), and MOS interface traps.