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Navitas Semiconductor

Product Engineer, SiC

Posted 5 Days Ago
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In-Office
90503, Torrance, CA, USA
90K-135K Annually
Junior
In-Office
90503, Torrance, CA, USA
90K-135K Annually
Junior
Support development and production of high-voltage SiC power devices through device characterization, test planning, CP/FT test development, data analysis, wafer probing, root-cause analysis, yield monitoring, and cross-functional issue resolution from silicon bring-up to high-volume manufacturing.
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Job Purpose

Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.

The Product Engineer – SiC supports the development and production of high-voltage Silicon Carbide power devices spanning the 650 V to 10 kV range. This role helps ensure robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring-up through high-volume manufacturing and field deployment.

Key Responsibilities and Duties

  • Execute device characterization across the SiC portfolio, including test planning, measurement, and reporting.
  • Support the qualification of new technologies and products.
  • Develop CP and FT test plans and validate test hardware and test programs.
  • Support cross-functional task forces in resolving critical quality and yield issues.
  • Analyze CP/FT and characterization data to drive yield and quality improvements.
  • Support lot disposition, yield monitoring, and sustaining engineering activities.
  • Drive test-limit optimization and continuous-improvement initiatives.
  • Perform wafer probing, bench debugging, and root cause analysis.
  • Collaborate with Test, Reliability, Operations, and Packaging teams.
Qualifications

Required Qualifications

  • B.S. or M.S. in Electrical Engineering, Physics, or a related field.
  • 2–3 years of experience in high-voltage SiC (or discrete power device) product, test, or characterization engineering.
  • Experience with semiconductor device analysis and debugging.
  • Hands-on bench testing experience with high-voltage discrete FETs, including the use of low-voltage (LV) and high-voltage (HV) power supplies, digital multimeters (DMMs), and oscilloscopes.
  • Strong data-analysis skills (SPC, Cpk, yield).
  • Familiarity with CP/FT production flows.

Preferred Qualifications

  • Experience with failure analysis and reliability testing.
  • Exposure to SiC device physics and reliability mechanisms (gate oxide, avalanche/UIS, short-circuit).
  • Knowledge of JMP, Python, or similar data-analysis tools.

What We Offer

  • A front-row seat to the future of power electronics through industry-leading SiC and GaN technologies.
  • Hands-on ownership across the full product lifecycle, from silicon bring-up to high-volume manufacturing.
  • A fast-paced, execution-focused environment with strong mentorship and deep technical expertise across teams.
HQ

Navitas Semiconductor El Segundo, California, USA Office

El Segundo, CA, United States

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