Teams at Navitas Semiconductor

Leads ultra-high-voltage SiC device and process technology from architecture and simulation through fabrication, characterization, reliability qualification, and foundry transfer. Serves as technical lead and principal investigator for U.S. government-funded programs, manages milestones and deliverables, develops patents, supports customers, and mentors engineers across global sites. Focus areas include 3.3 kV–10 kV+ MOSFETs, diodes, JFETs, bipolar devices, process integration, TCAD, and high-voltage reliability testing.

Lead product engineering for GaN power semiconductor devices from silicon evaluation and NPI through qualification, production ramp, and sustaining engineering. Own characterization, CP/FT test strategy, yield improvement, datasheet validation, reliability assessment, and qualification readiness. Analyze device physics, manufacturing variation, and power switching behavior while coordinating cross-functional investigations with device, process, reliability, quality, test, applications, wafer fab, and OSAT teams.

Lead end-to-end new product introduction programs for GaN and SiC semiconductor products from concept through qualification, commercial launch, and production handoff. Manage gate reviews, schedules, risks, suppliers, foundry and OSAT coordination, cross-functional execution, executive reporting, and NPI process improvements. Directly manage and mentor junior program managers and interns while using Microsoft 365, AI productivity tools, and dashboards to track program health and launch readiness.